N895313512X N95313012D SUP-AL N895313000R

Description

N895313512X N95313012D SUP-AL N895313000R

N895313512X N95313012D SUP-AL N895313000R

MRAM is the abbreviation for Magneto resistive Random Access Memory. MRAM is a non volatile computer memory (NVRAM) technology that has made remarkable progress since its development in the 1990s. MRAM memory will eventually become the dominant and replace all other types of memory, becoming a true ‘universal memory’. Practical MRAM chips mainly utilize the tunneling magnetoresistance (TMR) effect, and previous giant magnetoresistance (GMR) or anisotropic magnetoresistance (AMR) were not practical.
The concept of MRAM chips was proposed in 1972, but it was not until the discovery of GMR in 1988 and TMR in 1995 that MRAM had practical prospects.
The simplest MRAM storage unit can adopt a metal sandwich structure, including two three-layer film structures (TMR structures) separated by a very thin insulator. The magnetic moment at the bottom layer is fixed (“pinned”), called the fixed layer, while the N-s pole direction at the top layer is bistable (variable), called the free layer. The magnetic moment direction of the top layer can switch between the same and opposite states as the bottom layer.

MHD112B-058-PP1-BN
MHD112D-027-PP0-BN
MHD112D-027-PP3-BN
MHD112D-027-NP0-BN
MHD112C-058-NP0-BN
MHD112C-058-PG0-BN
MHD112B-024-NG0-BN
MHD112C-058-PG3-BN
MHD112C-024-PP3-AN
MHD112B-024-NP0-AN
MHD112B-024-PG0-AN
MHD112C-058-PP0-BN
MHD112B-058-PG0-AN
MHD112A-024-PG0-BN
MHD112B-024-NP1-AN